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Samsung makes new RAM chips using 10 nm class process

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April 5, 2016

Samsung Electronics said earlier today it's started making RAM chips using a 10-nanometer class process and says the 8 GB chips it's producing are the first in the world to be manufactured in this manner.

To be exact, 10 nm compares to the approximate width of a human hair or the head of a really small pin.

Samsung leads to a disclaimer to the effect that “10nm-class denotes a process technology node somewhere between 10 and 19 nanometers, while 20nm-class means a process technology node somewhere between 20 and 29 nanometers.”

Samsung isn't saying just how big or small this memory chip is, but we can sure have a good idea of how small it is.

Even if Samsung is building at 19.9999999999 nanometers, the product is impressive because it involves quadruple patterning lithography and ultra-thin dielectric layer deposition.

The former technology is all about doing more at smaller scales, so that chips end up with a higher resolution of features.

The latter is about getting good substances into useful places and in the case of this DRAM means getting insulators in place to stop current leaking, a huge problem in most of these products.

Samsung's promising 10 nm RAM in modules from 4 GB to 128 GB, the former for laptops and the latter for servers.

All should hum along at 3,200 megabits per second while using about ten or twenty percent less power than their larger 20 nm predecessors.

To be sure, 128 GB RAM modules will be welcome for those who operate servers at scale, as they will allow great loads of memory.

Whether that will still matter once storage and memory all-but merge is anyone's guess. While we wait for that to happen, server personnel in IT departments everywhere can dream of amazing density.

Source: Samsung.

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