Samsung produces new flash card using its 3D V-NAND technology
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September 29, 2014
Faster and fatter flash cards that speed up server applications are in greater demand these days,
and Samsung is announcing that it's now mass-producing a 3.2 TB NVMe PCIe SSD flash card using
its 3D V-NAND technology.
Samsung says higher capacities are definetely coming, and sooner rather than later.
The SM-1715 doubles the previous NVMe SSD XS1715's 1.6 TB capacity maximum, and that product
used standard 2D planar NAND.
It delivered up to 740,000 4K IOPS and had a 3GB per second read bandwidth. The SM-1715 does
up to 750,000/130,000 random read/write IOPS and has a 3GB/sec read bandwidth and 2.2 GB/sec
Samsung will be releasing more product information soon, but added that the endurance is 10
full drive writes a day for five years and the targeted hosts for this half-height, half-length
card are high-end enterprise servers.
So how does this 3D V-NAND product stack up against other PCIe flash cards? It isn't a leader
in the capacity stakes, but HGST's FlashMax II runs up to 4.8 TB but it doesn't perform as well--
269,000/51,000 random read/write IOPS and 2.6/0.9 GB/sec read/write.
HGST has its newer FlashMax II cards that go faster, 531,000 random read O+IOPS for example,
but top out at 2.2 TB.
SanDisk (Fusion-io) has a 2.4 TB ioDrive 2 Duo doing 700,000 random read IOPS with 512-byte
blocks and 3GB/sec sequential read and write.
The Atomic SX-300 goes up to 6.4 TB, but is slower but more balanced than Samsung's speedster
at 215,000/300,000 random read/write IOPS.
Intel, Micron, Seagate and Toshiba have lower capacity and generally slower PCIe SSDs. They'll soon
need to refresh their product lines to match Samsung, if they want to keep their market share, however.
We can expect all of these suppliers to jump aboard the NVMe bandwagon soon. Samsung Electronics
memory marketing vice president Jeeho Baek said in a prepared statement-- "Samsung plans to
aggressively introduce V-NAND-based SSDs with even higher performance, density and reliability in
the near future."
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